advanced power n-channel enhancement mode electronics corp. power mosfet low on-resistance bv dss 30v fast switching r ds(on) 13.5m simple drive requirement i d 55a description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w w/ t stg t j symbol value units rthj-c thermal resistance junction-case max. 2.0 /w rthj-a thermal resistance junction-ambient max. 62 /w data & specifications subject to change without notice thermal data parameter storage temperature range total power dissipation 62.5 -55 to 150 operating junction temperature range -55 to 150 linear derating factor 0.5 continuous drain current, v gs @ 10v 35 pulsed drain current 1 215 gate-source voltage 20 continuous drain current, v gs @ 10v 55 parameter rating drain-source voltage 30 pb free plating product 201221041 ap60n03gs/p g d s g d s to-263(s) g d to-220(p) the advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. the to-263 package is universally preferred for all commercial- industrial surface mount applications and suited for low voltage applications such as dc/dc converters. the through-hole version (ap60N03GP) is available for low-profile applications.
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 30 - - v b v dss / t j breakdown voltage temperature coefficient reference to 25 , i d =1ma - 0.037 - v/ r ds(on) static drain-source on-resistance v gs =10v, i d =28a - 11.5 13.5 m v gs =4.5v, i d =22a - 18 20 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =28a - 30 - s i dss drain-source leakage current (t j =25 o c) v ds =30v, v gs =0v - - 1 ua drain-source leakage current (t j =150 o c) v ds =24v, v gs =0v - - 25 ua i gss gate-source forward leakage v gs =20v - - 100 na q g total gate charge 2 i d =28a - 22.4 - nc q gs gate-source charge v ds =24v - 2.7 - nc q gd gate-drain ("miller") charge v gs =5v - 14 - nc t d(on) turn-on delay time 2 v ds =15v - 7.4 - ns t r rise time i d =28a - 81 - ns t d(off) turn-off delay time r g =3.3 , v gs =10v - 24 - ns t f fall time r d =0.53 -18- ns c iss input capacitance v gs =0v - 950 - pf c oss output capacitance v ds =25v - 440 - pf c rss reverse transfer capacitance f=1.0mhz - 145 - pf source-drain diode symbol parameter test conditions min. typ. max. units i s continuous source current ( body diode ) v d =v g =0v , v s =1.3v - - 55 a i sm pulsed source current ( body diode ) 1 - - 215 a v sd forward on voltage 2 t j =25 , i s =55a, v gs =0v - - 1.3 v notes: 1.pulse width limited by safe operating area. 2.pulse width < 300us , duty cycle < 2%. ap60n03gs/p
fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature ap60n03gs/p 0.6 0.8 1 1.2 1.4 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =28a v g =10v 10 12 14 16 18 20 246810 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =28a t c =25 o c 0 50 100 150 200 02468 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 8.0v 6.0v v g =4.0v 0 50 100 150 02468 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c v g =4.0v 10v 8.0v 6.0v 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0 1 2 3 -50 0 50 100 150 t j , junction temperature ( o c) v gs(th) (v)
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform ap60n03gs/p 1 10 100 1000 1 10 100 v ds , drain-to-source voltage (v) i d (a) t c =25 o c single pulse 10us 100us 1ms 10ms 100ms 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0 2 4 6 8 10 12 14 0 5 10 15 20 25 30 35 40 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds =16v v ds =20v v ds =24v i d =28a 100 1000 10000 1 5 9 13 17 21 25 29 v ds , drain-to-source voltage (v) c (pf) f =1.0mhz c oss c rss c iss t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 5v q gs q gd q g charge
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